RSD050N06TL
- Mfr.Part #
- RSD050N06TL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 5A CPT3
- Stock
- 114,615
- In Stock :
- 114,615
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- Number of Pins :
- 3
- JESD-609 Code :
- e2
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 26 ns
- Height :
- 2.3mm
- Current - Continuous Drain (Id) @ 25°C :
- 5A Ta
- Rds On (Max) @ Id, Vgs :
- 109m Ω @ 5A, 10V
- Pbfree Code :
- yes
- Published :
- 2011
- Drain to Source Breakdown Voltage :
- 60V
- Continuous Drain Current (ID) :
- 5A
- Drain Current-Max (Abs) (ID) :
- 5A
- Width :
- 5.5mm
- JESD-30 Code :
- R-PSSO-G2
- Input Capacitance (Ciss) (Max) @ Vds :
- 290pF @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Terminal Finish :
- Tin/Copper (Sn98Cu2)
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Length :
- 6.5mm
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Vgs (Max) :
- ±20V
- Radiation Hardening :
- No
- Number of Terminations :
- 2
- Rise Time :
- 17ns
- Power Dissipation-Max :
- 15W Tc
- Factory Lead Time :
- 10 Weeks
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 8 ns
- Operating Temperature :
- 150°C TJ
- Drain-source On Resistance-Max :
- 0.14Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 8nC @ 10V
- Turn On Delay Time :
- 8 ns
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- RSD050N06TL

N-Channel Tape & Reel (TR) 109m Ω @ 5A, 10V ±20V 290pF @ 10V 8nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
RSD050N06TL Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 290pF @ 10V.This device conducts a continuous drain current (ID) of 5A, which is the maximum continuous current transistor can conduct.Using VGS=60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 60V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 5A.When the device is turned off, a turn-off delay time of 26 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 4V 10V volts (4V 10V).
RSD050N06TL Features
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 26 ns
RSD050N06TL Applications
There are a lot of ROHM Semiconductor
RSD050N06TL applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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