RSD050N10TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

15W

Pbfree Code :

yes

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

10

Lead Free :

Lead Free

Continuous Drain Current (ID) :

5A

Fall Time (Typ) :

15 ns

Drain Current-Max (Abs) (ID) :

5A

Vgs (Max) :

±20V

Rise Time :

15ns

Number of Terminations :

2

Turn On Delay Time :

10 ns

Power Dissipation-Max :

15W Tc

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

150°C TJ

Rds On (Max) @ Id, Vgs :

190m Ω @ 5A, 10V

ECCN Code :

EAR99

Number of Elements :

1

Length :

6.5mm

Pin Count :

3

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Height :

2.3mm

Terminal Finish :

Tin/Copper (Sn98Cu2)

Number of Pins :

3

Published :

2012

Drain-source On Resistance-Max :

0.205Ohm

Width :

5.5mm

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

100V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current - Continuous Drain (Id) @ 25°C :

5A Ta

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e2

Element Configuration :

Single

Transistor Application :

SWITCHING

Factory Lead Time :

10 Weeks

Pulsed Drain Current-Max (IDM) :

20A

Turn-Off Delay Time :

45 ns

Input Capacitance (Ciss) (Max) @ Vds :

530pF @ 25V

Transistor Element Material :

SILICON

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V