RFD16N05LSM9A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Terminal Finish :

Tin (Sn)

Voltage - Rated DC :

50V

Gate to Source Voltage (Vgs) :

10V

Drive Voltage (Max Rds On,Min Rds On) :

4V 5V

Turn On Delay Time :

14 ns

Width :

6.22mm

Number of Pins :

3

Threshold Voltage :

2V

Length :

6.73mm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rds On (Max) @ Id, Vgs :

47m Ω @ 16A, 5V

Turn-Off Delay Time :

42 ns

Current Rating :

16A

Drain to Source Breakdown Voltage :

50V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Power Dissipation :

60W

JEDEC-95 Code :

TO-252AA

Vgs (Max) :

±10V

Terminal Form :

Gull wing

FET Type :

N-Channel

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Power Dissipation-Max :

60W Tc

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Nominal Vgs :

2 V

Mount :

Surface Mount

ECCN Code :

EAR99

Published :

2003

Continuous Drain Current (ID) :

16mA

Vgs(th) (Max) @ Id :

2V @ 250mA

Height :

2.39mm

Number of Terminations :

2

Mounting Type :

Surface Mount

Weight :

260.37mg

Pulsed Drain Current-Max (IDM) :

45A

REACH SVHC :

No SVHC

Resistance :

47mOhm

Pbfree Code :

yes

Number of Elements :

1

Fall Time (Typ) :

14 ns

Rise Time :

30ns

Element Configuration :

Single

Additional Feature :

MEGAFET

Factory Lead Time :

8 Weeks

Lead Free :

Lead Free