RFD16N05LSM
- Mfr.Part #
- RFD16N05LSM
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 50V 16A TO252AA
- Stock
- 36,842
- In Stock :
- 36,842
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current Rating :
- 16A
- Dual Supply Voltage :
- 50V
- Case Connection :
- DRAIN
- RoHS Status :
- RoHS Compliant
- Number of Terminations :
- 2
- Voltage - Rated DC :
- 50V
- Power Dissipation :
- 60W
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Rds On (Max) @ Id, Vgs :
- 47m Ω @ 16A, 5V
- Gate Charge (Qg) (Max) @ Vgs :
- 80nC @ 10V
- Continuous Drain Current (ID) :
- 16A
- Terminal Finish :
- Tin (Sn)
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Weight :
- 260.37mg
- Vgs (Max) :
- ±10V
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate to Source Voltage (Vgs) :
- 10V
- JESD-30 Code :
- R-PSSO-G2
- Fall Time (Typ) :
- 14 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 60W Tc
- Drain-source On Resistance-Max :
- 0.056Ohm
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Pulsed Drain Current-Max (IDM) :
- 45A
- Nominal Vgs :
- 2 V
- Qualification Status :
- Not Qualified
- Vgs(th) (Max) @ Id :
- 2V @ 250mA
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tube
- ECCN Code :
- EAR99
- Rise Time :
- 30ns
- Drain to Source Breakdown Voltage :
- 50V
- Mount :
- Surface Mount
- Additional Feature :
- MEGAFET
- Mounting Type :
- Surface Mount
- Termination :
- SMD/SMT
- Turn-Off Delay Time :
- 42 ns
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 5V
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-252AA
- Datasheets
- RFD16N05LSM

N-Channel Tube 47m Ω @ 16A, 5V ±10V 80nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
RFD16N05LSM Description
These are N-channel logic level power MOSFET manufactured by MegaFET process. The feature size used in this process is close to that of LSI integrated circuits, thus achieving the best use of silicon and resulting in excellent performance. They are designed for the use of logic level (5V) drivers in applications such as programmable controllers, automotive switches, switching regulators, switching converters, motor relay drivers, and bipolar transistor emitter switches. This performance is achieved through a special gate oxide design that provides fully rated conductance in the gate bias range from 3V to 5V, which facilitates true switching power control directly from the logic supply voltage. Its predecessor was developmental TA09871.
RFD16N05LSM Features
16A, 50V
rDS(ON)= 0.047Ω
UIS SOA Rating Curve (Single Pulse)
Design Optimized for 5V Gate Drives
Can be Driven Directly from CMOS, NMOS, TTL Circuits
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Majority Carrier Devicee
Related Literature
?- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
RFD16N05LSM Applications
AC-DC Merchant Power Supply - Servers & Workstations
Workstation
Server & Mainframe
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