RFD16N05LSM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Additional Feature :

MEGAFET

Mount :

Surface Mount

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

16A

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Element Configuration :

Single

Current Rating :

16A

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Power Dissipation-Max :

60W Tc

REACH SVHC :

No SVHC

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain-source On Resistance-Max :

0.056Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

45A

Fall Time (Typ) :

14 ns

Rise Time :

30ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Number of Pins :

3

Turn-Off Delay Time :

42 ns

Nominal Vgs :

2 V

ECCN Code :

EAR99

Voltage - Rated DC :

50V

Pbfree Code :

yes

JESD-30 Code :

R-PSSO-G2

Gate to Source Voltage (Vgs) :

10V

JEDEC-95 Code :

TO-252AA

Vgs (Max) :

±10V

Drive Voltage (Max Rds On,Min Rds On) :

4V 5V

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Termination :

SMD/SMT

Case Connection :

DRAIN

Power Dissipation :

60W

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

2V @ 250mA

Weight :

260.37mg

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Dual Supply Voltage :

50V

Transistor Element Material :

SILICON

Packaging :

Tube

RoHS Status :

RoHS Compliant

Rds On (Max) @ Id, Vgs :

47m Ω @ 16A, 5V

Drain to Source Breakdown Voltage :

50V

Terminal Form :

Gull wing