RFD16N05L

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Vgs(th) (Max) @ Id :

2V @ 250mA

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

16A Tc

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

50V

Fall Time (Typ) :

14 ns

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

MEGAFET

Number of Pins :

3

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

4V 5V

Turn-Off Delay Time :

42 ns

Number of Elements :

1

Qualification Status :

Not Qualified

Case Connection :

DRAIN

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Gate to Source Voltage (Vgs) :

10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation :

60W

Nominal Vgs :

2 V

Weight :

260.37mg

Power Dissipation-Max :

60W Tc

Continuous Drain Current (ID) :

16A

Pulsed Drain Current-Max (IDM) :

45A

RoHS Status :

RoHS Compliant

Current Rating :

16A

Drain to Source Breakdown Voltage :

50V

Terminal Finish :

Tin (Sn)

JEDEC-95 Code :

TO-252AA

Rds On (Max) @ Id, Vgs :

47m Ω @ 16A, 5V

Dual Supply Voltage :

50V

Mounting Type :

Surface Mount

Vgs (Max) :

±10V

FET Type :

N-Channel

Rise Time :

30ns

Termination :

SMD/SMT

Mount :

Surface Mount

Pbfree Code :

yes

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.056Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)