RFD16N05

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Turn-Off Delay Time :

55 ns

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Power Dissipation-Max :

72W Tc

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

45A

Additional Feature :

MEGAFET

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

0.056Ohm

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 20V

Terminal Finish :

Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

30 ns

Power Dissipation :

72W

Lead Free :

Lead Free

Rise Time :

30ns

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Terminal Form :

Gull wing

JESD-609 Code :

e3

JEDEC-95 Code :

TO-252AA

Packaging :

Tube

Element Configuration :

Single

Pbfree Code :

yes

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

16A

Voltage - Rated DC :

50V

Case Connection :

DRAIN

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

RoHS Compliant

JESD-30 Code :

R-PSSO-G2

Qualification Status :

Not Qualified

Number of Elements :

1

Current Rating :

16A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

50V

Rds On (Max) @ Id, Vgs :

47m Ω @ 16A, 10V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Mount :

Through Hole

ECCN Code :

EAR99