RFD16N05

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Mfr.Part #
RFD16N05
Manufacturer
onsemi
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
MOSFET N-CH 50V 16A I-PAK
Stock
80
In Stock :
80

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Element Configuration :
Single
Power Dissipation :
72W
JESD-30 Code :
R-PSSO-G2
Operating Temperature :
-55°C~175°C TJ
Number of Terminations :
2
Pbfree Code :
yes
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mount :
Through Hole
Terminal Form :
Gull wing
Current - Continuous Drain (Id) @ 25°C :
16A Tc
JESD-609 Code :
e3
Qualification Status :
Not Qualified
Operating Mode :
ENHANCEMENT MODE
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation-Max :
72W Tc
Vgs(th) (Max) @ Id :
4V @ 250µA
Additional Feature :
MEGAFET
Mounting Type :
Through Hole
ECCN Code :
EAR99
Transistor Application :
SWITCHING
Turn-Off Delay Time :
55 ns
Rise Time :
30ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Voltage - Rated DC :
50V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Lead Free :
Lead Free
Current Rating :
16A
Packaging :
Tube
Vgs (Max) :
±20V
Pulsed Drain Current-Max (IDM) :
45A
Rds On (Max) @ Id, Vgs :
47m Ω @ 16A, 10V
Fall Time (Typ) :
30 ns
Continuous Drain Current (ID) :
16A
Drain-source On Resistance-Max :
0.056Ohm
JEDEC-95 Code :
TO-252AA
FET Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
900pF @ 25V
Number of Elements :
1
Transistor Element Material :
SILICON
RoHS Status :
RoHS Compliant
Drain to Source Breakdown Voltage :
50V
Gate to Source Voltage (Vgs) :
20V
Terminal Finish :
Tin (Sn)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs :
80nC @ 20V
Case Connection :
DRAIN
Datasheets
RFD16N05
Introducing Transistors - FETs, MOSFETs - Single onsemi RFD16N05 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Terminations:2, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type:Through Hole, RFD16N05 pinout, RFD16N05 datasheet PDF, RFD16N05 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi RFD16N05 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi RFD16N05


N-Channel Tube 47m Ω @ 16A, 10V ±20V 900pF @ 25V 80nC @ 20V TO-251-3 Short Leads, IPak, TO-251AA

RFD16N05 Description


The  ON Semiconductor RFD16N05 is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance.  It can be operated directly from integrated circuits.



RFD16N05 Features


  • Peak Current vs Pulse Width Curve

  • UIS Rating Curve

  • 175°C Operating Temperature

  • 16A, 50V

  • rDS(ON)= 0.047Ω

  • Temperature Compensating PSPICE Model



RFD16N05 Applications


  • AC-DC Merchant Power Supply - Servers & Workstations

  • Workstation

  • Server & Mainframe


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