RFD16N05
- Mfr.Part #
- RFD16N05
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 50V 16A I-PAK
- Stock
- 80
- In Stock :
- 80
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Power Dissipation :
- 72W
- JESD-30 Code :
- R-PSSO-G2
- Operating Temperature :
- -55°C~175°C TJ
- Number of Terminations :
- 2
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Terminal Form :
- Gull wing
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- JESD-609 Code :
- e3
- Qualification Status :
- Not Qualified
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Power Dissipation-Max :
- 72W Tc
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Additional Feature :
- MEGAFET
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 55 ns
- Rise Time :
- 30ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Voltage - Rated DC :
- 50V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Current Rating :
- 16A
- Packaging :
- Tube
- Vgs (Max) :
- ±20V
- Pulsed Drain Current-Max (IDM) :
- 45A
- Rds On (Max) @ Id, Vgs :
- 47m Ω @ 16A, 10V
- Fall Time (Typ) :
- 30 ns
- Continuous Drain Current (ID) :
- 16A
- Drain-source On Resistance-Max :
- 0.056Ohm
- JEDEC-95 Code :
- TO-252AA
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 900pF @ 25V
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- RoHS Status :
- RoHS Compliant
- Drain to Source Breakdown Voltage :
- 50V
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Finish :
- Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 80nC @ 20V
- Case Connection :
- DRAIN
- Datasheets
- RFD16N05

N-Channel Tube 47m Ω @ 16A, 10V ±20V 900pF @ 25V 80nC @ 20V TO-251-3 Short Leads, IPak, TO-251AA
RFD16N05 Description
The ON Semiconductor RFD16N05 is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It can be operated directly from integrated circuits.
RFD16N05 Features
-
Peak Current vs Pulse Width Curve
-
UIS Rating Curve
-
175°C Operating Temperature
-
16A, 50V
-
rDS(ON)= 0.047Ω
-
Temperature Compensating PSPICE Model
RFD16N05 Applications
-
AC-DC Merchant Power Supply - Servers & Workstations
-
Workstation
-
Server & Mainframe
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The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
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