RFD16N05

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Number of Elements :

1

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Power Dissipation :

72W

Current Rating :

16A

Power Dissipation-Max :

72W Tc

Pulsed Drain Current-Max (IDM) :

45A

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

50V

Transistor Application :

SWITCHING

Fall Time (Typ) :

30 ns

Lead Free :

Lead Free

Continuous Drain Current (ID) :

16A

Mount :

Through Hole

Rise Time :

30ns

Rds On (Max) @ Id, Vgs :

47m Ω @ 16A, 10V

Turn-Off Delay Time :

55 ns

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

MEGAFET

RoHS Status :

RoHS Compliant

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-252AA

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Voltage - Rated DC :

50V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Case Connection :

DRAIN

Terminal Form :

Gull wing

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

2

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 20V

Drain-source On Resistance-Max :

0.056Ohm

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 25V

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED