RFD16N02L

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

16A

Surface Mount :

yes

Number of Elements :

1

ECCN Code :

EAR99

Transistor Element Material :

SILICON

JESD-609 Code :

e0

Power Dissipation-Max (Abs) :

90W

Qualification Status :

Not Qualified

RoHS Status :

Non-RoHS Compliant

Operating Temperature (Max) :

175°C

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminals :

2

JESD-30 Code :

R-PSSO-G2

Drain-source On Resistance-Max :

0.022Ohm

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin/Lead (Sn/Pb)

Additional Feature :

MEGAFET, LOGIC LEVEL COMPATIBLE

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

20V

JEDEC-95 Code :

TO-252AA

Case Connection :

DRAIN

Polarity/Channel Type :

N-Channel

Transistor Application :

SWITCHING