RFD14N06

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-251AA

Operating Temperature (Max) :

175°C

Power Dissipation-Max (Abs) :

48W

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSIP-T3

Number of Elements :

1

Power Dissipation Ambient-Max :

48W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

Non-RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Number of Terminals :

3

Turn Off Time-Max (toff) :

100ns

Reach Compliance Code :

not_compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.1Ohm

Surface Mount :

No

Terminal Finish :

Tin/Lead (Sn/Pb)

ECCN Code :

EAR99

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

14A

JESD-609 Code :

e0

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

60V

Additional Feature :

AVALANCHE RATED

Turn On Time-Max (ton) :

60ns

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

THROUGH-HOLE

Transistor Application :

SWITCHING

Polarity/Channel Type :

N-Channel