RFD14N05SM9A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-252AA

JESD-30 Code :

R-PSSO-G2

Threshold Voltage :

4V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Number of Terminations :

2

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Power Dissipation :

48W

Transistor Application :

SWITCHING

Pbfree Code :

yes

Resistance :

100MOhm

ECCN Code :

EAR99

Rise Time :

26ns

Height :

2.39mm

Turn On Delay Time :

14 ns

Terminal Finish :

Tin (Sn)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Mounting Type :

Surface Mount

Fall Time (Typ) :

17 ns

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Turn-Off Delay Time :

45 ns

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Width :

6.22mm

Case Connection :

DRAIN

Continuous Drain Current (ID) :

14mA

Rds On (Max) @ Id, Vgs :

100m Ω @ 14A, 10V

Published :

2004

Transistor Element Material :

SILICON

Length :

6.73mm

Voltage - Rated DC :

50V

Factory Lead Time :

8 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

570pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 20V

Gate to Source Voltage (Vgs) :

20V

Weight :

260.37mg

REACH SVHC :

No SVHC

Nominal Vgs :

4 V

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Power Dissipation-Max :

48W Tc

Operating Mode :

ENHANCEMENT MODE

Current Rating :

14A

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Breakdown Voltage :

50V

Number of Pins :

3