RFD14N05SM9A
- Mfr.Part #
- RFD14N05SM9A
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 24,534
- In Stock :
- 24,534
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSSO-G2
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Voltage - Rated DC :
- 50V
- Radiation Hardening :
- No
- Weight :
- 260.37mg
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 20V
- Resistance :
- 100MOhm
- Factory Lead Time :
- 8 Weeks
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- REACH SVHC :
- No SVHC
- Gate to Source Voltage (Vgs) :
- 20V
- Fall Time (Typ) :
- 17 ns
- ECCN Code :
- EAR99
- Current Rating :
- 14A
- Height :
- 2.39mm
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Continuous Drain Current (ID) :
- 14mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-609 Code :
- e3
- Case Connection :
- DRAIN
- Power Dissipation :
- 48W
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Length :
- 6.73mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 570pF @ 25V
- Turn On Delay Time :
- 14 ns
- Mount :
- Surface Mount
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 14A, 10V
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 26ns
- Nominal Vgs :
- 4 V
- Power Dissipation-Max :
- 48W Tc
- Published :
- 2004
- JEDEC-95 Code :
- TO-252AA
- Number of Terminations :
- 2
- Threshold Voltage :
- 4V
- Turn-Off Delay Time :
- 45 ns
- Width :
- 6.22mm
- Operating Temperature :
- -55°C~175°C TJ
- Number of Pins :
- 3
- Drain to Source Breakdown Voltage :
- 50V
- Datasheets
- RFD14N05SM9A

N-Channel Tape & Reel (TR) 100m Ω @ 14A, 10V ±20V 570pF @ 25V 40nC @ 20V TO-252-3, DPak (2 Leads + Tab), SC-63
RFD14N05SM9A Description
The RFD14N05SM9A is an N-channel Power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. The RFD14N05SM9A is designed for use in applications such as switching regulators, switching converters, and relay drivers. The transistor RFD14N05SM9A can be operated directly from integrated circuits.
RFD14N05SM9A Features
-
14A, 50V
-
rDS(ON)= 0.100Ω
-
Temperature Compensating PSPICE? Model
-
Peak Current vs Pulse Width Curve
-
UIS Rating Curve
-
175°C Operating Temperature
RFD14N05SM9A Applications
-
Lighting
-
AC-DC Merchant Power Supply - Servers & Workstations
-
Workstation
-
Server
-
Mainframe
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