RCD080N25TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Length :

6.7mm

Drain Current-Max (Abs) (ID) :

8A

Published :

2013

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

1440pF @ 25V

Power Dissipation-Max :

850mW Ta 20W Tc

Power Dissipation :

20W

Rise Time :

40ns

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Terminal Finish :

Tin/Copper (Sn98Cu2)

Factory Lead Time :

10 Weeks

Vgs(th) (Max) @ Id :

5V @ 1mA

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

300m Ω @ 4A, 10V

Number of Pins :

3

Turn-Off Delay Time :

40 ns

Avalanche Energy Rating (Eas) :

4.67 mJ

Operating Temperature :

150°C TJ

Terminal Form :

Gull wing

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

15 ns

Turn On Delay Time :

30 ns

Mount :

Surface Mount

Radiation Hardening :

No

Width :

5.8mm

ECCN Code :

EAR99

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current - Continuous Drain (Id) @ 25°C :

8A Ta

Packaging :

Tape and Reel (TR)

Pin Count :

3

Number of Elements :

1

Element Configuration :

Single

Transistor Application :

SWITCHING

Vgs (Max) :

±30V

Height :

2.5mm

JESD-609 Code :

e2

Continuous Drain Current (ID) :

8A

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

250V

Gate to Source Voltage (Vgs) :

30V