RCD075N20TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

755pF @ 25V

Drain to Source Voltage (Vdss) :

200V

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

5.25V @ 1mA

Continuous Drain Current (ID) :

7.5A

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

200V

Rise Time :

22ns

Operating Temperature :

150°C TJ

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

20 ns

Factory Lead Time :

10 Weeks

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

325m Ω @ 3.75A, 10V

JESD-30 Code :

R-PSSO-G2

Number of Channels :

1

Gate to Source Voltage (Vgs) :

30V

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Power Dissipation-Max :

850mW Ta 20W Tc

Mount :

Surface Mount

Published :

2011

Number of Pins :

3

FET Type :

N-Channel

Number of Terminations :

2

Lead Free :

Lead Free

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

7.5A Tc

Number of Elements :

1

Turn-Off Delay Time :

24 ns

Vgs (Max) :

±30V

Fall Time (Typ) :

12 ns

Radiation Hardening :

No