RCD050N20TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

30V

Number of Pins :

3

Fall Time (Typ) :

11 ns

Vgs(th) (Max) @ Id :

5.25V @ 1mA

Number of Elements :

1

DS Breakdown Voltage-Min :

200V

Operating Temperature :

150°C TJ

Drain Current-Max (Abs) (ID) :

5A

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Published :

2011

Turn On Delay Time :

17 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

200V

Current - Continuous Drain (Id) @ 25°C :

5A Ta

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

618m Ω @ 2.5A, 10V

Radiation Hardening :

No

Continuous Drain Current (ID) :

5A

Mount :

Surface Mount

Rise Time :

15ns

Terminal Position :

Single

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 10V

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

20A

Factory Lead Time :

40 Weeks

Turn-Off Delay Time :

22 ns

Power Dissipation-Max :

20W Tc

Drain-source On Resistance-Max :

0.618Ohm

Transistor Application :

SWITCHING

Vgs (Max) :

±30V

Input Capacitance (Ciss) (Max) @ Vds :

380pF @ 25V