RCD040N25TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn On Delay Time :

17 ns

Gate to Source Voltage (Vgs) :

30V

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Pulsed Drain Current-Max (IDM) :

16A

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Drain-source On Resistance-Max :

1Ohm

Turn-Off Delay Time :

20 ns

Transistor Application :

SWITCHING

Fall Time (Typ) :

12 ns

Drain to Source Breakdown Voltage :

250V

Transistor Element Material :

SILICON

Radiation Hardening :

No

Published :

2011

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Power Dissipation :

20W

Continuous Drain Current (ID) :

4A

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

4A Ta

Rise Time :

15ns

Mounting Type :

Surface Mount

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

4A

Vgs (Max) :

±30V

Power Dissipation-Max :

20W Tc

ECCN Code :

EAR99

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

1.61 mJ