RCD051N20TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Cut Tape (CT)

FET Type :

N-Channel

Mounting Type :

Surface Mount

Operating Temperature :

150°C TJ

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Drain-source On Resistance-Max :

0.76Ohm

Drain to Source Voltage (Vdss) :

200V

JESD-609 Code :

e2

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Published :

2014

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

ECCN Code :

EAR99

Factory Lead Time :

10 Weeks

Terminal Finish :

Tin/Copper (Sn98Cu2)

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

5A

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

760m Ω @ 2.5A, 10V

Gate Charge (Qg) (Max) @ Vgs :

8.3nC @ 10V

Vgs (Max) :

±30V

Terminal Position :

Single

Reach Compliance Code :

not_compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Lead Free

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 25V

Vgs(th) (Max) @ Id :

5.25V @ 1mA

Drain Current-Max (Abs) (ID) :

5A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

DS Breakdown Voltage-Min :

200V

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

10

Power Dissipation-Max :

850mW Ta 20W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)