R8008ANJGTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Product Category :

MOSFET

Series :

-

Mounting Style :

SMD/SMT

Gate Charge (Qg) (Max) @ Vgs :

38 nC @ 10 V

Maximum Operating Temperature :

+ 150 C

Package Type :

LPTS

Package :

Digi-Reel?

Power Dissipation (Max) :

195W (Tc)

Mounting :

Surface Mount

Operating Temperature Classification :

Military

Manufacturer :

Rohm Semiconductor

Product Status :

Active

Operating Temp Range :

-55C to 150C

Channel Mode :

Enhancement

FET Type :

N-Channel

Operating Temperature :

150°C (TJ)

Configuration :

Single

Minimum Operating Temperature :

- 55 C

Brand :

Rohm Semiconductor

Current - Continuous Drain (Id) @ 25°C :

8A (Tc)

Drain to Source Voltage (Vdss) :

800 V

Input Capacitance (Ciss) (Max) @ Vds :

1100 pF @ 25 V

RoHS :

Details

Number of Channels :

1 Channel

Type :

Power MOSFET

Rds On (Max) @ Id, Vgs :

1.03Ohm @ 4A, 10V

Rise Time :

35 ns

Product Type :

MOSFET

Transistor Polarity :

N-Channel

Drain-Source On-Volt :

800(V)

FET Feature :

-

Polarity :

N

Vgs(th) (Max) @ Id :

5V @ 1mA

Drive Voltage (Max Rds On, Min Rds On) :

10V

Gate-Source Voltage (Max) :

±30(V)

Continuous Drain Current :

8(A)

Power Dissipation :

195(W)

Mounting Type :

Surface Mount

Pin Count :

2 +Tab

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Elements :

1

Subcategory :

MOSFETs

Supplier Device Package :

TO-263S

Packaging :

Tape and Reel

Vgs (Max) :

±30V

Rad Hardened :

No