R8005ANJFRGTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

800V

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

5V @ 1mA

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

2.1 Ω @ 2.5A, 10V

Number of Elements :

1

Drain to Source Voltage (Vdss) :

800V

Number of Terminations :

2

Pulsed Drain Current-Max (IDM) :

10A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

Case Connection :

DRAIN

Factory Lead Time :

23 Weeks

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Avalanche Energy Rating (Eas) :

1.66 mJ

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Surface Mount :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

120W Tc

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 25V

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

5A

Series :

Automotive, AEC-Q101

Operating Temperature :

150°C TJ

Operating Mode :

ENHANCEMENT MODE