R8005ANJFRGTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

800V

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G2

Factory Lead Time :

23 Weeks

RoHS Status :

ROHS3 Compliant

Series :

Automotive, AEC-Q101

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±30V

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Power Dissipation-Max :

120W Tc

Drain to Source Voltage (Vdss) :

800V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

2

Case Connection :

DRAIN

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

2.1 Ω @ 2.5A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

5A

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

10A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 1mA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

1.66 mJ