R8005ANJFRGTL
- Mfr.Part #
- R8005ANJFRGTL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 5A LPTS
- Stock
- 1,870
- In Stock :
- 1,870
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- DS Breakdown Voltage-Min :
- 800V
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 2.1 Ω @ 2.5A, 10V
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 800V
- Number of Terminations :
- 2
- Pulsed Drain Current-Max (IDM) :
- 10A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±30V
- Case Connection :
- DRAIN
- Factory Lead Time :
- 23 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Avalanche Energy Rating (Eas) :
- 1.66 mJ
- Terminal Position :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Surface Mount :
- yes
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max :
- 120W Tc
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 500pF @ 25V
- JESD-30 Code :
- R-PSSO-G2
- Mounting Type :
- Surface Mount
- Drain Current-Max (Abs) (ID) :
- 5A
- Series :
- Automotive, AEC-Q101
- Operating Temperature :
- 150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- R8005ANJFRGTL

N-Channel Tape & Reel (TR) 2.1 Ω @ 2.5A, 10V ±30V 500pF @ 25V 20nC @ 10V 800V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
R8005ANJFRGTL Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1.66 mJ.The maximum input capacitance of this device is 500pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 5A.There is no pulsed drain current maximum for this device based on its rated peak drain current 10A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 800V.The drain-to-source voltage (Vdss) of this transistor needs to be at 800V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
R8005ANJFRGTL Features
the avalanche energy rating (Eas) is 1.66 mJ
based on its rated peak drain current 10A.
a 800V drain to source voltage (Vdss)
R8005ANJFRGTL Applications
There are a lot of ROHM Semiconductor
R8005ANJFRGTL applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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