R8002ANX

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

2A

JESD-30 Code :

R-PSFM-T3

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

Turn On Delay Time :

17 ns

Number of Elements :

1

Element Configuration :

Single

Case Connection :

Isolated

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Rise Time :

20ns

Fall Time (Typ) :

70 ns

Continuous Drain Current (ID) :

2A

Radiation Hardening :

No

Factory Lead Time :

10 Weeks

Mount :

Through Hole

Packaging :

Bulk

Input Capacitance (Ciss) (Max) @ Vds :

210pF @ 25V

Pulsed Drain Current-Max (IDM) :

8A

FET Type :

N-Channel

Published :

2012

Gate to Source Voltage (Vgs) :

30V

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

0.265 mJ

Rds On (Max) @ Id, Vgs :

4.3 Ω @ 1A, 10V

Power Dissipation :

35W

Vgs(th) (Max) @ Id :

5V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

800V

Power Dissipation-Max :

35W Tc

Package / Case :

TO-220-3 Full Pack

Operating Temperature :

150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

12.7nC @ 10V

Lead Free :

Lead Free

Mounting Type :

Through Hole

Turn-Off Delay Time :

33 ns