R8003KND3TL1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1 Channel

Gate Charge (Qg) (Max) @ Vgs :

11.5 nC @ 10 V

Product Category :

MOSFET

Operating Temperature :

150°C (TJ)

Number of Elements :

1

Vgs (Max) :

±20V

Drive Voltage (Max Rds On, Min Rds On) :

10V

Manufacturer :

Rohm Semiconductor

Drain-Source On-Volt :

800(V)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Input Capacitance (Ciss) (Max) @ Vds :

300 pF @ 100 V

Operating Temp Range :

-55C to 150C

Package Type :

DPAK

Mounting Type :

Surface Mount

Maximum Operating Temperature :

+ 150 C

Subcategory :

MOSFETs

Vgs(th) (Max) @ Id :

4.5V @ 2mA

Power Dissipation (Max) :

45W (Ta)

Package :

Digi-Reel?

Packaging :

Tape and Reel

Pin Count :

2 +Tab

Type :

Power MOSFET

Current - Continuous Drain (Id) @ 25°C :

3A (Ta)

FET Type :

N-Channel

Brand :

Rohm Semiconductor

Product Status :

Active

Channel Mode :

Enhancement

Supplier Device Package :

TO-252

RoHS :

Details

Rad Hardened :

No

Configuration :

Single

Transistor Polarity :

N-Channel

Mounting Style :

SMD/SMT

Mounting :

Surface Mount

Minimum Operating Temperature :

- 55 C

Gate-Source Voltage (Max) :

±20(V)

Power Dissipation :

48(W)

Polarity :

N

Rds On (Max) @ Id, Vgs :

1.8Ohm @ 1.5A, 10V

Series :

-

FET Feature :

-

Drain to Source Voltage (Vdss) :

800 V

Product Type :

MOSFET

Operating Temperature Classification :

Military

Rise Time :

15 ns

Continuous Drain Current :

3(A)