R8005ANX

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

40W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Vgs(th) (Max) @ Id :

5V @ 1mA

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

1.66 mJ

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

2.08 Ω @ 2.5A, 10V

FET Type :

N-Channel

DS Breakdown Voltage-Min :

800V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3 Full Pack

Mounting Type :

Through Hole

Reach Compliance Code :

not_compliant

JESD-30 Code :

R-PSFM-T3

Packaging :

Bulk

Continuous Drain Current (ID) :

5A

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Case Connection :

Isolated

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

Vgs (Max) :

±30V

Pulsed Drain Current-Max (IDM) :

20A

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Operating Temperature :

150°C TJ

Drain Current-Max (Abs) (ID) :

5A

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

485pF @ 25V

JEDEC-95 Code :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

800V

Number of Elements :

1

Lead Free :

Lead Free

Factory Lead Time :

10 Weeks

Published :

2013