R6515ENXC7G

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Power Dissipation :

60W

Package / Case :

TO-220-3 Full Pack

Packaging :

Tube

Product Status :

Active

Configuration :

Single

Vgs(th) (Max) @ Id :

4V @ 430μA

Vgs (Max) :

±20V

Channel Type :

N Channel

MSL :

MSL 1 - Unlimited

Channel Mode :

Enhancement

Manufacturer :

Rohm Semiconductor

Qualification :

-

Rds On (Max) @ Id, Vgs :

315mOhm @ 6.5A, 10V

Current - Continuous Drain (Id) @ 25°C :

15A (Ta)

Power Dissipation (Max) :

60W (Tc)

RoHS :

Details

Transistor Type :

Power MOSFET

Maximum Operating Temperature :

+ 150 C

Gate Charge (Qg) (Max) @ Vgs :

40 nC @ 10 V

Series :

-

Rise Time :

55 ns

Subcategory :

MOSFETs

Mounting Style :

Through Hole

Product Category :

MOSFET

FET Feature :

-

Transistor Polarity :

N-Channel

Drain to Source Voltage (Vdss) :

650 V

Mounting Type :

Through Hole

Supplier Device Package :

TO-220FM

Drive Voltage (Max Rds On, Min Rds On) :

10V

Product Type :

MOSFET

Brand :

Rohm Semiconductor

Number of Channels :

1 Channel

Operating Temperature :

150°C (TJ)

Package :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

910 pF @ 25 V

Continuous Drain Current Id :

15A

Minimum Operating Temperature :

- 55 C