R6511KNJTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

8 Weeks

Drain-source On Resistance-Max :

0.4Ohm

DS Breakdown Voltage-Min :

650V

Number of Terminations :

2

Power Dissipation-Max :

124W Tc

Rds On (Max) @ Id, Vgs :

400m Ω @ 3.8A, 10V

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Avalanche Energy Rating (Eas) :

223 mJ

Vgs(th) (Max) @ Id :

5V @ 320μA

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

11A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

33A

Drain to Source Voltage (Vdss) :

650V

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

760pF @ 25V

Number of Elements :

1

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Transistor Application :

SWITCHING