R6511ENXC7G

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

11A (Ta)

FET Type :

N-Channel

Channel Type :

N Channel

Package :

Tube

MSL :

MSL 1 - Unlimited

Vgs (Max) :

±20V

Maximum Operating Temperature :

+ 150 C

Series :

-

Mounting Style :

Through Hole

Brand :

Rohm Semiconductor

RoHS :

Details

Package / Case :

TO-220-3 Full Pack

Subcategory :

MOSFETs

Input Capacitance (Ciss) (Max) @ Vds :

670 pF @ 25 V

Product Type :

MOSFET

Operating Temperature :

150°C (TJ)

Rds On (Max) @ Id, Vgs :

400mOhm @ 3.8A, 10V

Transistor Type :

Power MOSFET

Rise Time :

35 ns

Vgs(th) (Max) @ Id :

4V @ 320μA

Manufacturer :

Rohm Semiconductor

Qualification :

-

Power Dissipation (Max) :

53W (Tc)

Drive Voltage (Max Rds On, Min Rds On) :

10V

Power Dissipation :

53W

Channel Mode :

Enhancement

Mounting Type :

Through Hole

Configuration :

Single

Transistor Polarity :

N-Channel

Minimum Operating Temperature :

- 55 C

Continuous Drain Current Id :

11A

FET Feature :

-

Gate Charge (Qg) (Max) @ Vgs :

32 nC @ 10 V

Packaging :

Tube

Drain to Source Voltage (Vdss) :

650 V

Number of Channels :

1 Channel

Supplier Device Package :

TO-220FM

Product Category :

MOSFET

Product Status :

Active