R6511KNXC7G

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS :

Details

Gate Charge (Qg) (Max) @ Vgs :

22 nC @ 10 V

Mounting Style :

Through Hole

Packaging :

Tube

Configuration :

Single

Vgs (Max) :

±20V

Package / Case :

TO-220-3 Full Pack

Vgs(th) (Max) @ Id :

5V @ 320μA

Mounting Type :

Through Hole

Drive Voltage (Max Rds On, Min Rds On) :

10V

Operating Temperature :

150°C (TJ)

Power Dissipation :

53W

Product Category :

MOSFET

FET Type :

N-Channel

Brand :

Rohm Semiconductor

Product Type :

MOSFET

Qualification :

-

Continuous Drain Current Id :

11A

Package :

Tube

Number of Channels :

1 Channel

Minimum Operating Temperature :

- 55 C

Rise Time :

20 ns

Manufacturer :

Rohm Semiconductor

Drain to Source Voltage (Vdss) :

650 V

Rds On (Max) @ Id, Vgs :

400mOhm @ 3.8A, 10V

Maximum Operating Temperature :

+ 150 C

Channel Type :

N Channel

Input Capacitance (Ciss) (Max) @ Vds :

760 pF @ 25 V

Channel Mode :

Enhancement

Current - Continuous Drain (Id) @ 25°C :

11A (Ta)

Series :

-

Supplier Device Package :

TO-220FM

Transistor Polarity :

N-Channel

Power Dissipation (Max) :

53W (Tc)

Transistor Type :

Power MOSFET

MSL :

MSL 1 - Unlimited

Product Status :

Active

Subcategory :

MOSFETs

FET Feature :

-