R6511END3TL1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Product Type :

MOSFET

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

670 pF @ 25 V

Qualification :

-

Vgs(th) (Max) @ Id :

4V @ 320μA

Brand :

Rohm Semiconductor

Operating Temperature :

150°C (TJ)

Mounting Type :

Surface Mount

Supplier Device Package :

TO-252

Channel Type :

N Channel

RoHS :

Details

Package :

Digi-Reel?

Product Status :

Active

Power Dissipation (Max) :

124W (Tc)

Rise Time :

35 ns

FET Feature :

-

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Minimum Operating Temperature :

- 55 C

Drive Voltage (Max Rds On, Min Rds On) :

10V

Power Dissipation :

124W

Transistor Polarity :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

32 nC @ 10 V

Mounting Style :

SMD/SMT

Maximum Operating Temperature :

+ 150 C

Product Category :

MOSFET

Packaging :

Cut Tape

Subcategory :

MOSFETs

Channel Mode :

Enhancement

Rds On (Max) @ Id, Vgs :

400mOhm @ 3.8A, 10V

Pin Count :

3

Series :

-

Vgs (Max) :

±20V

Manufacturer :

Rohm Semiconductor

Configuration :

Single

Package Type :

DPAK (TO-252)

Number of Elements per Chip :

1

Number of Channels :

1 Channel

Drain to Source Voltage (Vdss) :

650 V

Current - Continuous Drain (Id) @ 25°C :

11A (Tc)

Continuous Drain Current Id :

11A