QS8K51TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Fall Time (Typ) :

15 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Channels :

2

Mount :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Current-Max (IDM) :

6A

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

2A

Turn-Off Delay Time :

30 ns

DS Breakdown Voltage-Min :

100V

Number of Pins :

8

Gate to Source Voltage (Vgs) :

20V

FET Type :

2 N-Channel (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Continuous Drain Current (ID) :

2A

Package / Case :

8-SMD, Flat Lead

Number of Terminations :

8

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Drain to Source Resistance :

240mOhm

Max Power Dissipation :

1.5W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn On Delay Time :

10 ns

Drain to Source Voltage (Vdss) :

30V

RoHS Status :

ROHS3 Compliant

Published :

2016

Reach Compliance Code :

not_compliant

Min Operating Temperature :

-55°C

Base Part Number :

*K51

Factory Lead Time :

10 Weeks

Number of Elements :

2

Max Operating Temperature :

150°C

Rise Time :

10ns