QS8K13TCR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

150°C TJ

Max Power Dissipation :

550mW

FET Type :

2 N-Channel (Dual)

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Drain Current-Max (Abs) (ID) :

6A

Published :

2012

Terminal Finish :

Tin/Copper (Sn/Cu)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Number of Elements :

2

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Mounting Type :

Surface Mount

Packaging :

Cut Tape (CT)

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Standard

Continuous Drain Current (ID) :

6A

Pulsed Drain Current-Max (IDM) :

18A

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Number of Terminations :

8

Package / Case :

8-SMD, Flat Lead

Rds On (Max) @ Id, Vgs :

28m Ω @ 6A, 10V

ECCN Code :

EAR99

Pin Count :

8

Factory Lead Time :

20 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

30V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pbfree Code :

yes

JESD-30 Code :

R-PDSO-F8

Time@Peak Reflow Temperature-Max (s) :

10

Peak Reflow Temperature (Cel) :

260

Qualification Status :

Not Qualified

Mount :

Surface Mount

Power - Max :

550mW

Drain-source On Resistance-Max :

0.039Ohm

Transistor Element Material :

SILICON

JESD-609 Code :

e2

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

390pF @ 10V