QS8K11TCR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Voltage (Vdss) :

30V

Operating Temperature :

150°C TJ

Pin Count :

8

Number of Elements :

2

Factory Lead Time :

20 Weeks

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

3.5A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power - Max :

1.5W

Gate Charge (Qg) (Max) @ Vgs :

3.3nC @ 5V

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

8

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.07Ohm

Input Capacitance (Ciss) (Max) @ Vds :

180pF @ 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

8-SMD, Flat Lead

DS Breakdown Voltage-Min :

30V

Vgs(th) (Max) @ Id :

2.5V @ 1mA

FET Type :

2 N-Channel (Dual)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Packaging :

Cut Tape (CT)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max (Abs) :

1.5W

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

3.5A

Pulsed Drain Current-Max (IDM) :

12A

Rds On (Max) @ Id, Vgs :

50m Ω @ 3.5A, 10V

JESD-30 Code :

R-PDSO-F8