QS8K2TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Turn On Delay Time :

8 ns

Number of Pins :

8

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

FET Type :

2 N-Channel (Dual)

Input Capacitance (Ciss) (Max) @ Vds :

285pF @ 10V

Operating Temperature :

150°C TJ

Turn-Off Delay Time :

29 ns

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Factory Lead Time :

10 Weeks

Number of Elements :

2

Max Power Dissipation :

1.25W

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

54m Ω @ 3.5A, 4.5V

Rise Time :

12ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

30V

Continuous Drain Current (ID) :

3.5A

Packaging :

Tape and Reel (TR)

FET Feature :

Logic Level Gate

Drain to Source Breakdown Voltage :

30V

Drain-source On Resistance-Max :

0.077Ohm

Radiation Hardening :

No

Fall Time (Typ) :

13 ns

Package / Case :

8-SMD, Flat Lead

Mounting Type :

Surface Mount

Base Part Number :

*K2

Number of Channels :

2

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

10

Number of Terminations :

8

Gate to Source Voltage (Vgs) :

12V

Published :

2010

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

4.6nC @ 4.5V

Pin Count :

8

Pbfree Code :

yes