QH8M22TCR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Voltage (Vdss) :

40V

Power - Max :

1.1W Ta

Drain-source On Resistance-Max :

0.059Ohm

DS Breakdown Voltage-Min :

40V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

46m Ω @ 4.5A, 10V, 190m Ω @ 2A, 10V

Number of Elements :

2

Avalanche Energy Rating (Eas) :

1.6 mJ

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

193pF 450pF @ 20V

FET Feature :

Standard

Drain Current-Max (Abs) (ID) :

4.5A

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

FET Type :

N and P-Channel

Pulsed Drain Current-Max (IDM) :

18A

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

4.5A Ta 2A Ta

JESD-30 Code :

R-PDSO-F8

Packaging :

Cut Tape (CT)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

8-SMD, Flat Lead

Number of Terminations :

8

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2.5V @ 10μA, 3V @ 1mA

Terminal Position :

Dual

Reach Compliance Code :

not_compliant

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

2.6nC, 9.5nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Factory Lead Time :

16 Weeks

Operating Temperature :

150°C TJ