QH8MA2TCR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

DS Breakdown Voltage-Min :

30V

Current - Continuous Drain (Id) @ 25°C :

4.5A 3A

Drain to Source Voltage (Vdss) :

30V

Transistor Application :

SWITCHING

Number of Terminations :

8

Mount :

Surface Mount

FET Feature :

Logic Level Gate

Max Power Dissipation :

1.25W

Operating Mode :

ENHANCEMENT MODE

FET Type :

N and P-Channel

Rds On (Max) @ Id, Vgs :

35m Ω @ 4.5A, 10V

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Cut Tape (CT)

JESD-30 Code :

R-PDSO-F8

Drain-source On Resistance-Max :

0.0056Ohm

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

12A

Transistor Element Material :

SILICON

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

4.5A

Operating Temperature :

150°C TJ

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Terminal Position :

Dual

Factory Lead Time :

20 Weeks

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

8-SMD, Flat Lead

Avalanche Energy Rating (Eas) :

1.5 mJ

Input Capacitance (Ciss) (Max) @ Vds :

365pF @ 10V

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

8.4nC @ 10V

Number of Elements :

2

Published :

2014

Continuous Drain Current (ID) :

3A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED