PMXB75UPEZ

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

DS Breakdown Voltage-Min :

20V

Vgs(th) (Max) @ Id :

1V @ 250μA

Published :

2014

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

2.9A

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

NO LEAD

Number of Elements :

1

Pin Count :

3

Rds On (Max) @ Id, Vgs :

85m Ω @ 2.9A, 4.5V

Package / Case :

3-XDFN Exposed Pad

Current - Continuous Drain (Id) @ 25°C :

2.9A Ta

Drain to Source Voltage (Vdss) :

20V

Factory Lead Time :

4 Weeks

Drain-source On Resistance-Max :

0.085Ohm

Input Capacitance (Ciss) (Max) @ Vds :

608pF @ 10V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 4.5V

Reference Standard :

IEC-60134

JESD-30 Code :

R-PDSO-N3

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Vgs (Max) :

±8V

Number of Terminations :

3

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Power Dissipation-Max :

317mW Ta 8.33W Tc

Packaging :

Tape and Reel (TR)

FET Type :

P-Channel

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)