PMXB350UPEZ
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- Mfr.Part #
- PMXB350UPEZ
- Manufacturer
- NXP Semiconductors
- Package / Case
- 3-XDFN Exposed Pad
- Datasheet
- Download
- Description
- NEXPERIA PMXB350UPE - 20 V, P-CH
- Stock
- 40,000
- In Stock ：
- 40,000
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2014
- Power Dissipation-Max :
- 360mW Ta 5.68W Tc
- FET Type :
- P-Channel
- Vgs (Max) :
- ±8V
- Rise Time :
- 9ns
- Rds On (Max) @ Id, Vgs :
- 447m Ω @ 1.2A, 4.5V
- Factory Lead Time :
- 4 Weeks
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 1.2A Ta
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.2V 4.5V
- Drain to Source Voltage (Vdss) :
- 20V
- Continuous Drain Current (ID) :
- 1.2A
- Turn On Delay Time :
- 3 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 2.3nC @ 4.5V
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 950mV @ 250μA
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 18 ns
- Package / Case :
- 3-XDFN Exposed Pad
- Fall Time (Typ) :
- 6 ns
- Max Dual Supply Voltage :
- -20V
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 116pF @ 10V
- Gate to Source Voltage (Vgs) :
- 8V
- Pin Count :
- 3
- Datasheets
- PMXB350UPEZ
P-Channel Tape & Reel (TR) 447m Ω @ 1.2A, 4.5V ±8V 116pF @ 10V 2.3nC @ 4.5V 20V 3-XDFN Exposed Pad
PMXB350UPEZ Overview
A device's maximum input capacitance is 116pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 1.2A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 18 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 3 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.Powered by -20V, it supports maximum dual supply voltages.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (1.2V 4.5V) to reduce its overall power consumption.
PMXB350UPEZ Features
a continuous drain current (ID) of 1.2A
the turn-off delay time is 18 ns
a 20V drain to source voltage (Vdss)
PMXB350UPEZ Applications
There are a lot of Nexperia USA Inc.
PMXB350UPEZ applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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