PMXB56ENZ

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Radiation Hardening :

No

Power Dissipation :

1.07W

Drain-source On Resistance-Max :

0.065Ohm

Gate to Source Voltage (Vgs) :

20V

Max Dual Supply Voltage :

30V

Transistor Element Material :

SILICON

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

6.3nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn-Off Delay Time :

11 ns

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

3.2A Ta

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

209pF @ 15V

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Rise Time :

12ns

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

3.2A

Factory Lead Time :

4 Weeks

Vgs(th) (Max) @ Id :

2V @ 250μA

Number of Pins :

3

Number of Terminations :

3

Pin Count :

3

Fall Time (Typ) :

2 ns

Rds On (Max) @ Id, Vgs :

55m Ω @ 3.2A, 10V

Published :

2016

FET Type :

N-Channel

Power Dissipation-Max :

400mW Ta 8.33W Tc

Package / Case :

3-XDFN Exposed Pad

Turn On Delay Time :

3 ns

RoHS Status :

ROHS3 Compliant