PMXB40UNEZ

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

556pF @ 10V

Fall Time (Typ) :

9 ns

Rds On (Max) @ Id, Vgs :

45m Ω @ 3.2A, 4.5V

Factory Lead Time :

4 Weeks

Number of Terminations :

3

Max Dual Supply Voltage :

12V

Continuous Drain Current (ID) :

3.2A

Vgs(th) (Max) @ Id :

900mV @ 250μA

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.064Ohm

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Radiation Hardening :

No

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

3.2A Ta

Contact Plating :

Tin

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Turn On Delay Time :

6 ns

Package / Case :

3-XDFN Exposed Pad

Gate to Source Voltage (Vgs) :

8V

Number of Elements :

1

Surface Mount :

yes

Rise Time :

21ns

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

11.6nC @ 4.5V

Turn-Off Delay Time :

18 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±8V

FET Type :

N-Channel

Power Dissipation-Max :

400mW Ta 8.33W Tc

Published :

2013