PMXB360ENEAZ

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Pin Count :

3

Additional Feature :

LOGIC LEVEL COMPATIBLE

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate to Source Voltage (Vgs) :

20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Rise Time :

3.5ns

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

2.7V @ 250μA

Turn On Delay Time :

2 ns

Published :

2013

Rds On (Max) @ Id, Vgs :

450m Ω @ 1.1A, 10V

Factory Lead Time :

4 Weeks

Fall Time (Typ) :

3 ns

Input Capacitance (Ciss) (Max) @ Vds :

130pF @ 40V

Current - Continuous Drain (Id) @ 25°C :

1.1A Ta

Terminal Finish :

Tin (Sn)

Number of Pins :

3

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Max Dual Supply Voltage :

80V

Continuous Drain Current (ID) :

1.1A

Case Connection :

DRAIN

Surface Mount :

yes

Power Dissipation-Max :

400mW Ta 6.25W Tc

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

4.5nC @ 10V

Drain-source On Resistance-Max :

0.45Ohm

Vgs (Max) :

±20V

Number of Elements :

1

Transistor Element Material :

SILICON

Turn-Off Delay Time :

9 ns

Package / Case :

3-XDFN Exposed Pad