PMXB43UNEZ

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.054Ohm

Surface Mount :

yes

Rise Time :

20ns

Package / Case :

3-XDFN Exposed Pad

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

8V

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

3.2A Ta

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Turn-Off Delay Time :

17 ns

Continuous Drain Current (ID) :

3.2A

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

900mV @ 250μA

Turn On Delay Time :

6 ns

FET Type :

N-Channel

Published :

2013

Power Dissipation-Max :

400mW Ta 8.33W Tc

Vgs (Max) :

±8V

Input Capacitance (Ciss) (Max) @ Vds :

551pF @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Fall Time (Typ) :

4 ns

Max Dual Supply Voltage :

20V

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

54m Ω @ 3.2A, 4.5V

Factory Lead Time :

4 Weeks

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ