PMXB65UPEZ

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Mfr.Part #
PMXB65UPEZ
Manufacturer
Nexperia
Package / Case
3-XDFN Exposed Pad
Datasheet
Download
Description
MOSFET P-CH 12V 3.2A DFN1010D-3
Stock
9,400
In Stock :
9,400

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Manufacturer :
Nexperia
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance (Ciss) (Max) @ Vds :
634pF @ 6V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Type :
P-Channel
Drain to Source Voltage (Vdss) :
12V
Power Dissipation-Max :
317mW Ta 8.33W Tc
Min Operating Temperature :
-55°C
Rds On Max :
72 mΩ
Vgs (Max) :
±8V
Operating Temperature :
-55°C~150°C TJ
Vgs(th) (Max) @ Id :
1V @ 250μA
Factory Lead Time :
4 Weeks
Package / Case :
3-XDFN Exposed Pad
Mount :
Surface Mount
Packaging :
Tape and Reel (TR)
Rds On (Max) @ Id, Vgs :
72mOhm @ 3.2A, 4.5V
Mounting Type :
Surface Mount
Input Capacitance :
634pF
Gate Charge (Qg) (Max) @ Vgs :
12nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) :
1.2V 4.5V
Supplier Device Package :
DFN1010D-3
Current - Continuous Drain (Id) @ 25°C :
3.2A Ta
Max Operating Temperature :
150°C
RoHS Status :
ROHS3 Compliant
Drain to Source Resistance :
59mOhm
Continuous Drain Current (ID) :
3.2A
Published :
2014
Datasheets
PMXB65UPEZ
Introducing Transistors - FETs, MOSFETs - Single Nexperia PMXB65UPEZ from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:3-XDFN Exposed Pad, Mounting Type:Surface Mount, PMXB65UPEZ pinout, PMXB65UPEZ datasheet PDF, PMXB65UPEZ amp .Beyond Transistors - FETs, MOSFETs - Single Nexperia PMXB65UPEZ ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia PMXB65UPEZ


P-Channel Tape & Reel (TR) 72mOhm @ 3.2A, 4.5V ±8V 634pF @ 6V 12nC @ 4.5V 12V 3-XDFN Exposed Pad

PMXB65UPEZ Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 634pF @ 6V.This device conducts a continuous drain current (ID) of 3.2A, which is the maximum continuous current transistor can conduct.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 59mOhm, which means the device is not biased.This transistor requires a drain-source voltage (Vdss) of 12V.In order to reduce power consumption, this device uses a drive voltage of 1.2V 4.5V volts (1.2V 4.5V).

PMXB65UPEZ Features


a continuous drain current (ID) of 3.2A
single MOSFETs transistor is 59mOhm
a 12V drain to source voltage (Vdss)


PMXB65UPEZ Applications


There are a lot of Nexperia USA Inc.
PMXB65UPEZ applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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