PMXB65ENEZ

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Max Junction Temperature (Tj) :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Factory Lead Time :

4 Weeks

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

295pF @ 15V

Height :

400μm

Rise Time :

12ns

Rds On (Max) @ Id, Vgs :

67m Ω @ 3.2A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

400mW Ta 8.33W Tc

Current - Continuous Drain (Id) @ 25°C :

3.2A Ta

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.067Ohm

Surface Mount :

yes

JESD-30 Code :

R-PDSO-N2

Drain to Source Breakdown Voltage :

30V

Max Dual Supply Voltage :

30V

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Package / Case :

3-XDFN Exposed Pad

Vgs (Max) :

±20V

Pin Count :

3

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

3 ns

Transistor Application :

SWITCHING

Ambient Temperature Range High :

150°C

Radiation Hardening :

No

Power Dissipation :

400mW

Published :

2016

Number of Elements :

1

Number of Channels :

1

Turn-Off Delay Time :

11 ns

Continuous Drain Current (ID) :

3.2A

Fall Time (Typ) :

3 ns

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE