PMV48XPAR

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Contact Plating :

Tin

Pin Count :

3

Operating Temperature :

150°C TJ

Vgs(th) (Max) @ Id :

1.25V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 10V

Transistor Application :

SWITCHING

Additional Feature :

LOGIC LEVEL COMPATIBLE

DS Breakdown Voltage-Min :

20V

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

510mW Ta 4.15W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

4 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Drain-source On Resistance-Max :

0.055Ohm

Published :

2010

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

FET Type :

P-Channel

Mount :

Surface Mount

Vgs (Max) :

±12V

Turn-Off Delay Time :

61 ns

Current - Continuous Drain (Id) @ 25°C :

3.5A Ta

Continuous Drain Current (ID) :

3.5A

Package / Case :

TO-236-3, SC-59, SOT-23-3

Drain to Source Voltage (Vdss) :

20V

Turn On Delay Time :

11 ns

Number of Elements :

1

Mounting Type :

Surface Mount

Rise Time :

13ns

Number of Pins :

3

Transistor Element Material :

SILICON

Number of Terminations :

3

Fall Time (Typ) :

23 ns

Gate to Source Voltage (Vgs) :

12V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

55m Ω @ 2.4A, 4.5V