PMV45EN2VL

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Factory Lead Time :

4 Weeks

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

Terminal Form :

Gull wing

Package / Case :

TO-236-3, SC-59, SOT-23-3

JEDEC-95 Code :

TO-236AB

Drain to Source Voltage (Vdss) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

209pF @ 15V

Series :

TrenchMOS™

Drain Current-Max (Abs) (ID) :

4.1A

Reference Standard :

IEC-60134

Vgs(th) (Max) @ Id :

2V @ 250μA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

yes

Drain-source On Resistance-Max :

0.042Ohm

FET Type :

N-Channel

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PDSO-G3

Number of Terminations :

3

Additional Feature :

LOGIC LEVEL COMPATIBLE

Current - Continuous Drain (Id) @ 25°C :

5.1A Ta

Gate Charge (Qg) (Max) @ Vgs :

6.3nC @ 10V

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

30V

Published :

1997

Rds On (Max) @ Id, Vgs :

42m Ω @ 4.1A, 10V

Power Dissipation-Max :

510mW Ta