PMV48XP,215

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

3.5A Ta

Radiation Hardening :

No

Terminal Position :

Dual

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Turn-Off Delay Time :

61 ns

Contact Plating :

Tin

Vgs (Max) :

±12V

Drain-source On Resistance-Max :

0.055Ohm

Turn On Delay Time :

11 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-236-3, SC-59, SOT-23-3

Vgs(th) (Max) @ Id :

1.25V @ 250μA

Published :

2010

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 10V

Number of Terminations :

3

Power Dissipation-Max :

510mW Ta

Continuous Drain Current (ID) :

3.5A

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

55m Ω @ 2.4A, 4.5V

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Max Dual Supply Voltage :

-20V

Power Dissipation :

510mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Pin Count :

3

Factory Lead Time :

4 Weeks

Drain to Source Breakdown Voltage :

-20V

Rise Time :

13ns

Drain to Source Voltage (Vdss) :

20V

Surface Mount :

yes

Transistor Application :

SWITCHING

Fall Time (Typ) :

23 ns

FET Type :

P-Channel

Gate to Source Voltage (Vgs) :

12V

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Additional Feature :

LOGIC LEVEL COMPATIBLE

Number of Pins :

3

Lead Free :

Lead Free