PMV45EN2R

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

4.1A

Input Capacitance (Ciss) (Max) @ Vds :

209pF @ 15V

Number of Terminations :

3

Terminal Position :

Dual

Package / Case :

TO-236-3, SC-59, SOT-23-3

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

30V

Transistor Application :

SWITCHING

Packaging :

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs :

6.3nC @ 10V

Vgs(th) (Max) @ Id :

2V @ 250μA

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Reference Standard :

IEC-60134

JEDEC-95 Code :

TO-236AB

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Number of Elements :

1

JESD-30 Code :

R-PDSO-G3

Power Dissipation-Max :

510mW Ta 5W Tc

Current - Continuous Drain (Id) @ 25°C :

4.1A Ta

FET Type :

N-Channel

Lead Free :

Lead Free

Published :

1997

Additional Feature :

LOGIC LEVEL COMPATIBLE

Factory Lead Time :

4 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

42m Ω @ 4.1A, 10V

Drain to Source Voltage (Vdss) :

30V

Mounting Type :

Surface Mount

Resistance :

35mOhm