PMV40UN,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Vgs (Max) :

±8V

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.047Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

30V

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PDSO-G3

Series :

TrenchMOS™

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

47m Ω @ 2A, 4.5V

Terminal Position :

Dual

Published :

1997

Pin Count :

3

Drain Current-Max (Abs) (ID) :

4.9A

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

445pF @ 30V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

4.9A Tc

Surface Mount :

yes

HTS Code :

8541.29.00.75

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

700mV @ 1mA

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

30V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

9.3nC @ 4.5V

Number of Terminations :

3

FET Type :

N-Channel

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JEDEC-95 Code :

TO-236AB

Power Dissipation-Max :

1.9W Tc