PMV450ENEAR

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.38Ohm

JEDEC-95 Code :

TO-236AB

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

3.6nC @ 10V

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-G3

Rds On (Max) @ Id, Vgs :

380m Ω @ 900mA, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

60V

Power Dissipation-Max :

323mW Ta 554mW Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

800mA

Series :

Automotive, AEC-Q101

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Additional Feature :

LOGIC LEVEL COMPATIBLE

Vgs(th) (Max) @ Id :

2.7V @ 250μA

Drain Current-Max (Abs) (ID) :

0.8A

Input Capacitance (Ciss) (Max) @ Vds :

101pF @ 30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Pin Count :

3

Reference Standard :

AEC-Q101; IEC-60134

Published :

2016

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

800mA Ta

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

4 Weeks

Vgs (Max) :

±20V

FET Type :

N-Channel

DS Breakdown Voltage-Min :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3