PMV450ENEAR

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

0.8A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

60V

Published :

2016

Number of Terminations :

3

Power Dissipation-Max :

323mW Ta 554mW Tc

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

800mA Ta

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

60V

Rds On (Max) @ Id, Vgs :

380m Ω @ 900mA, 10V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.38Ohm

Reference Standard :

AEC-Q101; IEC-60134

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2.7V @ 250μA

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-236AB

Pin Count :

3

Continuous Drain Current (ID) :

800mA

Vgs (Max) :

±20V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Factory Lead Time :

4 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

101pF @ 30V

Number of Elements :

1

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

3.6nC @ 10V

Transistor Application :

SWITCHING

Terminal Position :

Dual

Series :

Automotive, AEC-Q101

JESD-30 Code :

R-PDSO-G3

Operating Temperature :

-55°C~150°C TJ