PMV40UN2R

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Drain to Source Breakdown Voltage :

30V

Height :

1.1mm

Lead Free :

Lead Free

Threshold Voltage :

400mV

Current - Continuous Drain (Id) @ 25°C :

3.7A Ta

Input Capacitance (Ciss) (Max) @ Vds :

635pF @ 15V

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

3.7A

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PDSO-G3

Vgs (Max) :

±12V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Factory Lead Time :

4 Weeks

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Ambient Temperature Range High :

150°C

JESD-609 Code :

e3

Resistance :

36mOhm

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Position :

Dual

Terminal Form :

Gull wing

Published :

1997

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 4.5V

Mount :

Surface Mount

Power Dissipation :

490mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Number of Elements :

1

Vgs(th) (Max) @ Id :

900mV @ 250μA

JEDEC-95 Code :

TO-236AB

Turn-Off Delay Time :

34 ns

Mounting Type :

Surface Mount

Max Junction Temperature (Tj) :

150°C

Rds On (Max) @ Id, Vgs :

44m Ω @ 3.7A, 4.5V

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

12V

Power Dissipation-Max :

490mW Ta

Turn On Delay Time :

9 ns

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

1

Transistor Element Material :

SILICON