PMV48XP/MIR

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Additional Feature :

LOGIC LEVEL COMPATIBLE

Pin Count :

3

Number of Elements :

1

Surface Mount :

yes

Drain-source On Resistance-Max :

0.055Ohm

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1.25V @ 250μA

FET Type :

P-Channel

Drain to Source Voltage (Vdss) :

20V

Drain Current-Max (Abs) (ID) :

3.5A

Package / Case :

TO-236-3, SC-59, SOT-23-3

Reference Standard :

IEC-60134

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1nF @ 10V

Reach Compliance Code :

Compliant

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

510mW Ta 4.15W Tc

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

55m Ω @ 2.4A, 4.5V

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-236AB

Current - Continuous Drain (Id) @ 25°C :

3.5A Ta

JESD-30 Code :

R-PDSO-G3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Operating Temperature :

150°C TJ

Vgs (Max) :

±12V

Terminal Position :

Dual