PMDPB58UPE,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Arrays

Surface Mount :

yes

JESD-609 Code :

e3

Fall Time (Typ) :

14 ns

Gate to Source Voltage (Vgs) :

8V

Pin Count :

6

Drain to Source Voltage (Vdss) :

20V

Radiation Hardening :

No

Factory Lead Time :

8 Weeks

FET Feature :

Logic Level Gate

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Turn On Delay Time :

7 ns

Number of Terminations :

6

Input Capacitance (Ciss) (Max) @ Vds :

804pF @ 10V

Package / Case :

6-UDFN Exposed Pad

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Max Dual Supply Voltage :

-20V

FET Type :

2 P-Channel (Dual)

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

515mW

Continuous Drain Current (ID) :

3.6A

Transistor Application :

SWITCHING

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Number of Elements :

2

Number of Pins :

6

Turn-Off Delay Time :

41 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2012

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

14.4A

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

9.5nC @ 4.5V

Vgs(th) (Max) @ Id :

950mV @ 250μA

Rds On (Max) @ Id, Vgs :

67m Ω @ 2A, 4.5V

Rise Time :

15ns