PMDPB70EN,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

RoHS Status :

RoHS Compliant

Power Dissipation :

1.165W

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

4.5nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

510mW

Element Configuration :

Dual

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Fall Time (Typ) :

5 ns

Input Capacitance (Ciss) (Max) @ Vds :

130pF @ 15V

Drain to Source Breakdown Voltage :

30V

Turn On Delay Time :

3 ns

Continuous Drain Current (ID) :

3.5A

Number of Pins :

6

Max Dual Supply Voltage :

30V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Package / Case :

6-UDFN Exposed Pad

Turn-Off Delay Time :

15 ns

Max Power Dissipation :

510mW

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Rise Time :

16ns

Rds On (Max) @ Id, Vgs :

57m Ω @ 3.5A, 10V

Pin Count :

6